Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2022185856
Kind Code:
A
Abstract:
To provide a semiconductor storage device capable of increasing a heating temperature in a memory cell, improving locality of a heat generation position, and reducing disturbance (data corruption) to an adjacent memory cell.SOLUTION: A semiconductor storage device comprises: a core part extending in a first direction orthogonal to a semiconductor substrate; a resistance change layer extending in the first direction and in contact with the core part; a semiconductor layer extending in the first direction and in contact with the resistance change layer; a first insulator layer extending in the first direction and in contact with the semiconductor layer; and a memory cell extending in a second direction orthogonal to the first direction and including a first potential application electrode in contact with the first insulator layer. The core part includes an insulator with high heat resistance, a vacuum, or an inactive gas.SELECTED DRAWING: Figure 6
Inventors:
TAKAHASHI MASAHIRO
ASAO YOSHIAKI
NOMURA YUKIHIRO
TAKASHIMA DAIZABURO
ASAO YOSHIAKI
NOMURA YUKIHIRO
TAKASHIMA DAIZABURO
Application Number:
JP2021093747A
Publication Date:
December 15, 2022
Filing Date:
June 03, 2021
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
H01L21/8239; G11C13/00; H01L45/00; H01L49/00
Attorney, Agent or Firm:
Hidekazu Miyoshi
Shunichi Takahashi
Masakazu Ito
Toshio Takamatsu
Shunichi Takahashi
Masakazu Ito
Toshio Takamatsu