Title:
半導体記憶装置
Document Type and Number:
Japanese Patent JP4388008
Kind Code:
B2
Abstract:
A semiconductor memory device includes a plurality of memory cells using a current flowing through a wiring. A plurality of first write lines are electrically or magnetically or electrically and magnetically connected to the memory cells and provided along a first direction. A first connection line electrically connects at least two of the first write lines each other.
Inventors:
Tsuneo Inaba
Application Number:
JP2005346720A
Publication Date:
December 24, 2009
Filing Date:
November 30, 2005
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
G11C11/15; H01L21/8246; H01L27/10; H01L27/105; H01L43/08
Domestic Patent References:
| JP2002170379A | ||||
| JP2004518288A |
Foreign References:
| WO2003050817A1 |
Attorney, Agent or Firm:
Takehiko Suzue
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto