Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JPH01124189
Kind Code:
A
Abstract:
PURPOSE:To secure the driving capacity of required word lines and a sufficient operation margin without adopting Darlington connection by setting up the current amplification of a word driver transistor (TR) to a value larger than that of other TR. CONSTITUTION:Base diffusion depth is thinly formed and effective base width is narrowed as compared to other TRs so that the current amplification of the word driver TRQ13 for raising the potential of a word line 11 is set up to a value larger than that of the TRQ11 connected to the front stage side of the TRQ13. Since the driving capacity of the required word line 11 can be easily obtained by controlling the diffusion depth, adoption of Darlington connection is unnecessary. Since the word line can be driven by a single TR, a driving loss is restricted only to a level corresponding to single emitter-base diffusion potential and the charging potential of the word line can be increased, so that the operation margin can be expanded.
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Inventors:
KOTANI SHINJI
YAMAMOTO TAKAHIRO
YAMAMOTO TAKAHIRO
Application Number:
JP28166587A
Publication Date:
May 17, 1989
Filing Date:
November 06, 1987
Export Citation:
Assignee:
FUJITSU LTD
FUJITSU VLSI LTD
FUJITSU VLSI LTD
International Classes:
G11C11/415; G11C11/34; (IPC1-7): G11C11/34
Attorney, Agent or Firm:
Sadaichi Igita