PURPOSE: To take effective measures to cope with soft errors caused by α-rays by providing a capacitor between two storage nodes of an FF, and forming one electrode of the capacitor, of the same layer as a high resistance forming layer connected with the one node.

CONSTITUTION: On the surface of a P-well or P-type substrate 10, N+ diffusion layers 14 element-isolated by an oxide film 11 is formed; on the one diffusion layer 14, a gate polysilicon layer 15 is formed; a resistance polysilicon layer 16a and a polysilicon layer 15 which are formed via an interlayer insulating film 12 are connected via a contact hole 18; also on the other diffusion layer 14, a resistance polysilicon layer 16b is formed via an interlayer insulating layer 12; on the polysilicon layers 16a, 16b, a capacitor forming electrode 17 is formed via an interlayer film 13; the polysilicon layer 16a connected with the polysilicon layer 15 and the capacitor forming electrode 17 are connected via a contact hole 19. Thereby, the counter-measures to cope with soft errors caused by α-rays can be taken effectively.