To miniaturize a semiconductor storage in which a reference cell is arranged in a region near the center of a bit line.
In the semiconductor storage: a plurality of reference cells 4 are formed in a region near the center line in the specified region of a semiconductor substrate vertical to the bit line 10; one pair is composed of two adjacent bit lines of a plurality of bit lines 10; the position relationship of two bit lines 10 for composing each pair includes a first parallel state, and a second one in which the position relationship between two bit lines is inverted to the first parallel state; each bit line 10 includes a cross section 11 for crossing another bit line 10 composing the same pair to change the first and second parallel states; and at least one cross section 11 is provided on the specified region of the semiconductor substrate so that the length of the portion of the bit line 10 having the first parallel state becomes equal to that of the portion of the bit line 10 having the second parallel state.
SAKAGAMI MASAHIKO
MURAKIYUUMOKU YASUO
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