Title:
SEMICONDUCTOR STORAGE
Document Type and Number:
Japanese Patent JP2676177
Kind Code:
B2
Abstract:
PURPOSE: To obtain a DRAM having data preset function.
CONSTITUTION: In the DRAM having data preset function, one storage cell 10a includes contacts (formed through contact holes or through holes) 16, 17, 18 formed selectively to program preset data. When a preset data '0' is programmed, for example, terminals 16, 18 are formed but terminal 17 is not formed. Upon application of a high level data precharge signal DP, a transistor 15 is turned ON to discharge a data storage capacitor 14. In other words, predetermined data is written in the capacitor 14.
Inventors:
Tetsuya Matsumura
Yoshihiko Masahiko
Keisuke Okada
Yoshihiko Masahiko
Keisuke Okada
Application Number:
JP21511992A
Publication Date:
November 12, 1997
Filing Date:
August 12, 1992
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
G11C11/401; G11C11/405; G11C11/406; G11C11/4072; (IPC1-7): G11C11/401
Domestic Patent References:
| JP4192175A | ||||
| JP330184A | ||||
| JP5721796B2 | ||||
| JP5311335B2 |
Other References:
ＩＢＭ ＴＥＣＨＮＩＣＡＬ ＤＩＳＣＬＯＳＵＲＥ ＢＵＬＬＥＴＩＮ，ＶＯＬ．１４，ＮＯ．９（ＦＥＢ．１９７２），ＰＰ．２６０１−２６０２
ＩＢＭ ＴＥＣＨＮＩＣＡＬ ＤＩＳＣＬＯＳＵＲＥ ＢＵＬＬＥＴＩＮ，ＶＯＬ．３２，ＮＯ．９Ｂ（ＦＥＢ．１９９０），ＰＰ．３７２−３７４
ＩＢＭ ＴＥＣＨＮＩＣＡＬ ＤＩＳＣＬＯＳＵＲＥ ＢＵＬＬＥＴＩＮ，ＶＯＬ．３２，ＮＯ．９Ｂ（ＦＥＢ．１９９０），ＰＰ．３７２−３７４
Attorney, Agent or Firm:
Fukami Hisaro (3 outside)