Title:
SEMICONDUCTOR STRUCTURE DOPED WITH RARE-EARTH ELEMENT AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3079093
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a semiconductor structure containing a rare-earth dopant, which is particularly useful to optical devices, such as light-emitting diode(LED), laser, optical amplifier, etc., and a method for manufacturing the structure.
SOLUTION: A region 5 positioned near a p-n junction 4 is doped with a rare-earth element. A semiconductor structure doped with rare-earth element contains a p-n junction, having a first p-type region 2 and a first n-type region 3 in a semiconductor. The structure also contains a charge source coupled with either one of the regions 2 and 3 and excites rare-earth atoms by supplying charged carriers.
Inventors:
Joan Jay Pekari
Walter Jay Barhu
Walter Jay Barhu
Application Number:
JP3965899A
Publication Date:
August 21, 2000
Filing Date:
February 18, 1999
Export Citation:
Assignee:
International Business Machines Corporation
International Classes:
C09K11/77; H01L33/00; H01L33/34; H01S5/00; H01S5/30; H01S5/50; H01S3/0959; H01S3/16; (IPC1-7): H01L33/00; C09K11/77; H01S5/30; H01S5/50
Domestic Patent References:
| JP5175592A | ||||
| JP62268169A |
Attorney, Agent or Firm:
Hiroshi Sakaguchi (1 person outside)