To provide a semiconductor bipolar transistor structure which is improved in anti-electrostatic discharge (ESD), and to provide a manufacturing method thereof.

This semiconductor structure includes a bipolar transistor comprising an intrinsic base of a low impurity concentration, a high impurity concentration external base which is adjacent to the intrinsic base and has a doping transition boundary between the high impurity concentration base and the low impurity concentration base, and whose doping transition boundary between the high impurity concentration base and the low impurity concentration base is decided by the end of a window, and a silicide region extending onto the external base, containing the silicide region totally away from the window.