Title:
SEMICONDUCTOR STRUCTURE AND ITS GROWING METHOD
Document Type and Number:
Japanese Patent JP2007142291
Kind Code:
A
Abstract:
To provide a semiconductor structure which has a high-quality Ge epitaxial layer using a thin buffer layer, and to provide its growing method.
The semiconductor structure has an Si substrate, an SiGe layer of a thickness equal to or smaller than the critical thickness which is formed on it and contains a Ge composition ≥20% and ≤80%, and a Ge epitaxial layer which is formed on the SiGe layer.
Inventors:
NAKATSURU JUNKO
DATE DAIKI
IKEMOTO MANABU
DATE DAIKI
IKEMOTO MANABU
Application Number:
JP2005336419A
Publication Date:
June 07, 2007
Filing Date:
November 21, 2005
Export Citation:
Assignee:
CANON ANELVA CORP
International Classes:
H01L21/20
Domestic Patent References:
| JPH0982638A | 1997-03-28 | |||
| JP3535527B2 | 2004-06-07 | |||
| JP2005303246A | 2005-10-27 | |||
| JP2002359367A | 2002-12-13 |
Attorney, Agent or Firm:
Tamiya Hiroshi