To provide a method for manufacturing a semiconductor substrate of high quality which is used for a short wavelength semiconductor light emitting element, a high frequency and high efficiency semiconductor element, etc., and in which crystal defect of the semiconductor substrate is reduced.
On a single crystal semiconductor substrate 2, lamination of a single crystal semiconductor layer 3 whose kind is different from the substrate 2 is performed more thickly than thickness of the substrate by vapor phase growth. For another way, on a single crystal substrate, lamination of a single crystal semiconductor layer whose kind is different from the substrate is performed to thickness about one third of thickness of the substrate by vapor phase growth, and thickness of the semiconductor substrate is made almost the same as thickness of the single crystal semiconductor layer. After that, lamination of the single crystal semiconductor layer is further performed by vapor phase growth.
| JP6747960 | プラズマ処理装置 |
| JPS55132043 | SEMICONDUCTOR DEVICE |
| JP3068604 | [Title of Invention] Plasma CVD apparatus |
ABE YOSHIHISA
SUZUKI SHUNICHI
NAKANISHI HIDEO
Yujiro Taka