Title:
SEMICONDUCTOR SUBSTRATE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3183335
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor substrate with which the deterioration of characteristics of an epitaxial layer to be laminated can be prevented.
SOLUTION: This semiconductor substrate is mirror-surface polished and has a surface of low Si density. The Si density is set such that the interface of the epitaxial layer/substrate is 8×1017 cm-3 or less, when the equitaxial layer is formed on the surface of the mirror-surface polished substrate. After the semiconductor substrate has been mirror-surface polished by the polishing material containing colloidal silica, the polishing material is removed by cleaning the substrate while pH is a range of 10.5 to 14 is maintained by an amine-based cleaning material.
Inventors:
Yoshiki Yabuhara
Kazuhiko Oida
Kazuhiko Oida
Application Number:
JP36036997A
Publication Date:
July 09, 2001
Filing Date:
December 26, 1997
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
B08B3/08; H01L21/304; (IPC1-7): H01L21/304
Domestic Patent References:
| JP1174243A | ||||
| JP537018A |
Attorney, Agent or Firm:
Yoshiki Hasegawa (6 others)
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