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Title:
SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2012028760
Kind Code:
A
Abstract:

To provide a manufacturing method of a semiconductor device which suppresses the generation of dust due to film peeling and defective separation caused by dust due to the film peeling.

A first semiconductor substrate having a structure in which a release layer is not formed at a position on which a first dividing process is performed is used so that the release layer is not exposed at an edge face of a second semiconductor substrate when the second semiconductor substrate is cut out of the first semiconductor substrate. Before the second semiconductor substrate is subjected to a second dividing process, a support member is provided on a layer to be peeled of the second semiconductor substrate.


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Inventors:
SENDA AKIHIRO
OIKAWA YOSHIAKI
KAWANABE CHIHO
Application Number:
JP2011139226A
Publication Date:
February 09, 2012
Filing Date:
June 23, 2011
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L21/02; H01L27/12
Domestic Patent References:
JP2006173596A2006-06-29
JP2006245207A2006-09-14
JP2006093209A2006-04-06
JP2006173596A2006-06-29
JP2006245207A2006-09-14
JP2006093209A2006-04-06
Foreign References:
US20060110863A12006-05-25
US20060063309A12006-03-23



 
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