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Title:
SEMICONDUCTOR SWITCHING CIRCUIT
Document Type and Number:
Japanese Patent JPS59117318
Kind Code:
A
Abstract:

PURPOSE: To obtain a switch means excluding feed-through by means of electric charges in channels by using an N-channel transfer gate MOSFET and a P-channel MOSFET for compensation.

CONSTITUTION: The transfer gate MOSFETT1 is formed by N-channel type and an MOSFETT2 for compensation is formed by a P-channel type to form a transfer gate to which a switch control signal is applied. Further, the field- through charge itself is cancelled not by the charge transfer from the MOSFET T1 to the T2 but by the charge transfer of charges of opposite polarity mutually from the MOSFET T1 and T2 poled oppositely to an output terminal V0 so that an output voltage error is excluded sufficiently independently of the change in the operating temperature.


Inventors:
FURUKAWA KATSUHIRO
ISHIZUKA SHIGERU
Application Number:
JP22618482A
Publication Date:
July 06, 1984
Filing Date:
December 24, 1982
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
H03M1/38; H03H19/00; H03K17/16; H03K17/687; (IPC1-7): H03H11/04; H03K13/00; H03K17/687
Attorney, Agent or Firm:
Katsuo Ogawa (1 person outside)



 
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