PURPOSE: To obtain a semiconductor temperature detecting sensor which is not deteriorated by mechanical deformation, temperature changes, and contamination by providing a protective film constituting a vacuum chamber together with a silicon substrate so that the surface of a temperature sensor can be covered with the vacuum chamber.

CONSTITUTION: A protective film 15 which constitutes a vacuum chamber 16 together with a silicon substrate 11 is provided so that the surface of a semiconductor temperature detecting element 12 can be covered with the chamber 16. Therefore, when the element 12 is subjected to mechanical deformation or temperature change, the mechanical and thermal characteristics of the element 12 are not deteriorated by the film 15, since the mechanical and thermal properties of the film 15 are different from those of the element 12. In addition, the element 12 is not contaminated with impurities contained in the film 15. As a result, the mechanical and thermal characteristics of the element 12 are not deteriorated by the film 15 when this sensor is subjected to mechanical deformation or temperature changes. In addition, the element 12 is not contaminated by impurities contained in the film 15.