To improve the mobility of a thin-film-like semiconductor material by applying ultraviolet ray laser beams to an amorphous silicon thin film where the concentration of carbon, nitrogen, and oxygen is equal to or less than a specific value for dissolving, recrystallizing it, and then setting a wavenumber where the Raman shift of a Raman peak is equal to or less than a specific value.
An amorphous silicon covering is formed on a crystal substrate 601 and is etched in a rectangular shape, an amorphous silicon film 602 where the concentration of carbon, nitrogen, and oxygen is equal to or less than 1μ1019 cm-3 is obtained and then irradiated with excimer laser beams thus recrystallizing an impurity region. In this case, the Raman peak dependency of an electron mobility is small when the central value of the Raman peak of a silicon covering being subjected to laser annealing treatment is equal to or less than 515 cm-1 but the electron mobility increases rapidly as the central value of the peak increases when the central value is equal to or more than 515 cm-1. More specifically, by setting to a wavenumber where the Raman shift of the Raman peak is equal to or less than 515 cm-1, a thin-film semiconductor material with a high mobility can be obtained.
CHIYOU KOUYUU
KUSUMOTO NAOTO
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