PURPOSE: To diminish the crystal defects on the surface of a GaAs heteroepitaxial layer by a method wherein, when the second heteroepitaxial layer is grown, an element consisting of this layer and the different element in the same group are led in.

CONSTITUTION: In order to perform GaAs heteroepitaxially growing step on an Si substrate 11, H2, AsH3 are led into a reaction tube for heating the Si substrate 11 at high temperature under reduced pressure to cooled down to lower temperature for adding AsH3 and then TMGa(trimethyl gallium) is led-in to deposit an initial GaAs grown layer 12. Next, the substrate 11 is heated again for leading-in TMGa to grow a GaAs heteroepitaxial layer 13. Next, AsH3, TMGa and TMI(trimethyl indium) are added to grow In-added heteroepitaxial layer 14 and a GaAs heteroepitaxial layer 15. Through these procedures, the crystal defects on the surface of the GaAs heteroepitaxial layer can be diminished.