To provide a semiconductor thin film which is applicable keeping high enough in reliability in a wide range of temperature and uniform in electrical properties, a manufacturing method thereof, and a magnetoelectric transducer by a method wherein an InSb thin film equal in carrier mobility to a single crystal is easily and uniformly formed directly on a substrate at a low cost.

First, a surface layer is removed from an Si crystal substrate 1, and the Si crystal substrate 1 where the surface layer is removed is dipped into a water solution which contains hydrogen fluoride and ammonium fluoride. Then, a ground layer 3 of element selected out of Al, Ga, and In is formed on the substrate 1, and a pre-deposit layer 4 which contains at least In and Sb is formed on the ground layer 3. A semiconductor thin film 5 which contains at least In and Sb is formed on the pre-deposit layer 4 at a temperature higher than a temperature at which the pre-deposit layer 4 is started to be formed.