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Title:
SEMICONDUCTOR THIN FILM MANUFACTURING METHOD AND PLASMA CVD APPARATUS
Document Type and Number:
Japanese Patent JP2013033806
Kind Code:
A
Abstract:

To provide a manufacturing method of forming a high quality semiconductor thin film and provide a plasma CVD apparatus achieving the manufacturing method.

A semiconductor thin film manufacturing method comprises: a process of decomposing a compound containing group 4 element atoms and hydrogen atoms into plasma and active species; and a process of depositing the active species on a substrate. In the decomposing process, plasma generation energy is intermittently supplied such that an idle period and a supply period is repeated, and the plasma generation energy temporarily varies in the supply period.


Inventors:
KO HIDEKI
Application Number:
JP2011168386A
Publication Date:
February 14, 2013
Filing Date:
August 01, 2011
Export Citation:
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Assignee:
SHARP KK
International Classes:
H01L21/205; C23C16/509; H01L31/04; H05H1/46
Attorney, Agent or Firm:
Fukami patent office