PURPOSE: To obtain the semiconductor thin film having time stability by a method wherein the target of a semiconductor material is sputtered with plasmatic hydrogen, the generated semiconductor material and hydrogen compound gas are deposited on a substrate, and average crystal grain diameter of 100 or less is formed.
CONSTITUTION: After a vacuum container 1 has been evacuated, hydrogen gas is supplied from a gas feeding hole 2. Then, high frequency voltage is applied between electrodes 7 and 9 from a power source 3, the hydrogen supplied from the gas feeding hole 2 is turned plasmatic, and plasma 4 is formed there. The hydrogen ions of the plasma 4 come into collision with a target 5 by the action of the high frequency voltage, coming from the power source 3, and a permanent magnet 6, the semiconductor material located there is sputtered, the semiconductor material is vapor-deposited on the substrate 8 which is cooled down almost to the temperature of liquid nitrogen by the liquid nitrogen, and a semiconductor material thin film is deposited. The diffusion of the semiconductor material is suppressed by cooling the substrate 8 by the liquid nitrogen, and microcrystallization can be facilitated. Also, the more the gas pressure in the vacuum container becomes higher, the more it becomes advantageous for microcrystallization. However, when said pressure becomes higher than 100Torr, the silicon film is deposit ed on the part other than the substrate, and the normal operation of the device becomes difficult.
FURUKAWA MASASHI
ARAKI KENJI
MIYASATO TATSURO
FURUKAWA MASASHI
| JPS6091626A | 1985-05-23 | |||
| JPS5855328A | 1983-04-01 | |||
| JPS62185874A | 1987-08-14 | |||
| JPS6176674A | 1986-04-19 |