Title:
SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR COMPOSED BY USING THE SAME, AND METHOD FOR MANUFACTURING OF SEMICONDUCTOR THIN FILM
Document Type and Number:
Japanese Patent JP2009260157
Kind Code:
A
Abstract:
To provide a semiconductor thin film with high carrier mobility by a simple method.
The semiconductor thin film consisting of a metal complex represented by general formula (I) is composed. In the general formula (I), M is a group containing a transition metal atom, and L is a ligand. A1, A2, B1 and B2 may be identical or different, each of which is a hetero atom or a group containing the hetero atom. B1-Q(A1)(A2)-B2 composes a conjugated system, m is an integer of 0 to 4, and n is a positive integer.
Inventors:
SUGAWARA TOMOO
Application Number:
JP2008109749A
Publication Date:
November 05, 2009
Filing Date:
April 21, 2008
Export Citation:
Assignee:
NIPPON ZEON CO
International Classes:
H01L51/30; C08G79/00; H01L29/786; H01L51/05; H01L51/40
Attorney, Agent or Firm:
Iwao Yamaguchi
Kiyoshi Matsuzaki
Kiyoshi Matsuzaki