PURPOSE: To obtain a semiconductor treatment device capable of using a mechanical contact method which not only is simple but also easily allow an electrical contact by holding the semiconductor substrate in the horizontal position, immersing only the treatment surface into a solution, and supplying the solution in the vertical direction with the treatment surface facing the bottom.

CONSTITUTION: Semiconductor substrates 4 and corresponding electrodes 21 are disposed in opposed relation. By applying a voltage across the semiconductor substrates and the electrodes to treat the semiconductor substrates. In this case, a bottom end of the periphery of each semiconductor substrate 4 is placed on the edge of a holder portion 12 and on a vacuum adsorption hole 18, or otherwise, both sides of the semiconductor substrate are disposed on the vacuum adsorption hole 18 to dip the treatment surface facing the bottom into a solution 3. On the other hand, the solution 3 which enters from an entrance hole 16A and exits from an exit hole 16B is injected upward through injection nozzles 15A, 15A,... which pass through nozzles 15. Further, the solution 3 becomes a stirred fluid E by passing through the plurality of net-like electrodes 21 and is uniformly supplied in the vertical direction to the bottom-faced treatment surface of the semiconductor substrate 4. Then, a masking process such as coating must be performed. This arrangement will allow a coating composition to be uniformly stirred.