Title:
SEMICONDUCTOR-TYPE AMMONIA GAS SENSOR AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3170396
Kind Code:
B2
Abstract:
PURPOSE: To obtain a semiconductor-type ammonia gas sensor which is highly sensitive to ammonia gas and which is provided with selectivity with reference to flammable gases including an organic solvent in a metal-oxide semiconductor- type gas sensor, of a conventional type, which is composed mainly of a palladium-added tin oxide semiconductor and to obtain the manufacturing method of a sensor provided with such characteristics.
CONSTITUTION: A metal-oxide semiconductor part 5 is constituted so as to be provided with a palladium-rich surface layer 6 in which the atomic fraction of palladium and tin (Pd/Sn×100) is added to 4 to 20% by an electrodeposition method, an immersion method or the like and with a metal-oxide semiconductor inner part 7 in which the concentration of palladium to be added is adjusted to 1/20 to 1/4 with reference to the concentration of the palladium in the palladium-rich surface layer 6.
Inventors:
Yoshi Takada
Hiromasa Tanjo
Hiromasa Tanjo
Application Number:
JP25138293A
Publication Date:
May 28, 2001
Filing Date:
October 07, 1993
Export Citation:
Assignee:
New Cosmos Electric Co., Ltd.
International Classes:
G01N27/12; (IPC1-7): G01N27/12
Domestic Patent References:
| JP252247A |
Attorney, Agent or Firm:
Shuichiro Kitamura