Title:
SEMICONDUCTOR WORKING DEVICE
Document Type and Number:
Japanese Patent JPH06275544
Kind Code:
A
Abstract:
PURPOSE: To improve the flow rate controlling characteristic of a gaseous starting material supplying device by simplifying the constitution of the device.
CONSTITUTION: A flow rate valve 42 is connected to the exit side of a bubbler 41 and hydrogen saturated with an organic metal is passed through the valve 42. The section from the exit of the bubbler 41 to the connecting section of a pipeline to a reaction furnace through the valve 42 is housed in a thermostat 31.
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Inventors:
OGURA MUTSURO
Application Number:
JP8557993A
Publication Date:
September 30, 1994
Filing Date:
March 19, 1993
Export Citation:
Assignee:
AGENCY IND SCIENCE TECHN
International Classes:
H01L21/205; C23C16/52; H01L21/312; (IPC1-7): H01L21/205; H01L21/312
Domestic Patent References:
| JPS62160713A | 1987-07-16 | |||
| JPH0414217A | 1992-01-20 | |||
| JP3014148U | 1995-08-01 | |||
| JPH04130627A | 1992-05-01 | |||
| JPS5976426A | 1984-05-01 | |||
| JPH04276079A | 1992-10-01 | |||
| JPH04130718A | 1992-05-01 |
Attorney, Agent or Firm:
Director, Electronic Technology Research Institute, AIST