PURPOSE: To obtain an input protecting circuit strong for the fusing by overcurrent and the breakdown, by positioning a protecting diode immediately under a pad part.
CONSTITUTION: To transmit electric signal from outside into the active element in a semiconductor integrated circuit device formed on the first conductive semiconductor substrate 10, the pad 100 constituted of a conductive material 101 is provided on an insulating film 11 of the semiconductor substrate 10. Then, a contact hole 201 is formed on the insulating film 11 immediately under the pad 100 with the second conductive semiconductor region 202 provided thereunder to form a diode for the constitution of an input protecting circuit. Thus, the wiring layer of the conductive material 101 from the pad to protecting circuit becomes shortest to sufficiently enlarge the contact hole 201.
Next Patent: FIELD EFFECT TRANSISTOR DEVICE AND METHOD OF PRODUCING SAME