To provide a sensor device which has proper shock resistance and is capable of being reduced in size.
A sensor device includes: a first recessed section 30 partitioned by a plane 36 opposing to a top plane of a frame section 10 of a supporting section 24, a plane 38 opposing to a bottom plane of the supporting section 24 of the frame section 10, and a lateral plane 20 at the side of a spindle section 12 of a first insulating layer 14; a second recessed section 32 partitioned by a plane 40 opposing to a top plane of the spindle section 12 of a mass section 26, a plane 42 opposing to a bottom plane of the mass section 26 of the spindle section 12, and a lateral plane 22 at the side of the frame section 10 of a second insulating layer 18; and a third recessed section 70, formed in a lateral plane at the side of the spindle section 12 of the first insulating layer 14, located on a direction connecting the supporting section 24 of a beam section 16 and the mass section 26 or at a lateral plane, at the side of the frame section 10 of the second insulating layer 18. A depth 34 of the first recessed section 30 and a depth 35 of the second insulating layer 32 are not less than 3.3% and not greater than 5.0% of a width of the frame section 10.
OKI SEMICONDUCTOR MIYAZAKI CO
JP2005049130A | 2005-02-24 | |||
JP2004061280A | 2004-02-26 | |||
JP2006153689A | 2006-06-15 | |||
JP2007309654A | 2007-11-29 |
Kato Kazunori
Katsuichi Nishimoto
Hiroshi Fukuda
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