Title:
SENSOR ELEMENT
Document Type and Number:
Japanese Patent JP2015031666
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To be capable of measuring various physical quantities by fabricating a field effect transistor element using graphene and controlling its sensor environment.SOLUTION: Provided is a sensor element characterized in that a graphene film is layered on the surface of an electrode substrate formed by layering a gate electrode covered with an insulation film and mutually facing source electrode and drain electrode on a substrate. Also provided is a temperature measurement sensor element characterized in that the sensor element is encapsulated inside a completely light-shielded hermetic container in an inert gas atmosphere. Also provided is an optical sensor element characterized in that the optical sensor element comprises the temperature measurement sensor element and the sensor element which is adjacent to said element and is formed by encapsulating, in an inert gas environment, the sensor element inside a hermetic container transparent to a light wavelength to be measured.
Inventors:
KOSHOBU NOBUTAKE
DOI YOSHIYUKI
YAMADA TAKASHI
TOKO HIROYOSHI
DOI YOSHIYUKI
YAMADA TAKASHI
TOKO HIROYOSHI
Application Number:
JP2013163637A
Publication Date:
February 16, 2015
Filing Date:
August 06, 2013
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
G01J1/02; B82Y15/00; C01B31/02; G01J5/02; H01L29/06; H01L29/786; H01L31/10
Domestic Patent References:
| JPS58166226A | 1983-10-01 | |||
| JP2006008454A | 2006-01-12 | |||
| JP2013502735A | 2013-01-24 | |||
| JP2010122217A | 2010-06-03 |
Foreign References:
| WO2005015637A1 | 2005-02-17 |
Other References:
JPN6016021174; ＫＩＭ， Ｃｈａｎｇ-Ｈｅｅ ｅｔ ａｌ．: 'Ｅｆｆｅｃｔ ｏｆ Ｔｅｍｐｅｒａｔｕｒｅ ａｎｄ Ｈｕｍｉｄｉｔｙ ｏｎ ＮＯ２ ａｎｄ ＮＨ３ Ｇａｓ Ｓｅｎｓｉｔｉｖｉｔｙ ｏｆ Ｂｏｔｔｏｍ-Ｇａｔｅ Ｇｒａｐｈｅｎｅ ＦＥＴｓ Ｐｒｅｐａ' ＩＥＥＥ ＥＬＥＣＴＲＯＮ ＤＥＶＩＣＥ ＬＥＴＴＥＲＳ Ｖｏｌ． ３３， Ｎｏ． ７, 201207, ｐｐ． １０８４-１０８６
Attorney, Agent or Firm:
Patent business corporation A valley and Abe patent firm
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