Title:
Separation of the independence layer which consists of <100>silicon
Document Type and Number:
Japanese Patent JP6246198
Kind Code:
B2
Abstract:
A method for detaching a self-supporting layer of silicon of crystalline orientation <100>, particularly with the aim of applications in the field of photovoltaics, wherein the method includes the steps of: a) Implanting ionic species in a substrate made of silicon having a crystalline orientation <100> so as to create an embrittlement plane in the substrate, delimiting on both sides a self-supporting layer and a negative of the substrate, and b) Applying a heat treatment to the substrate implanted at step a) with a temperature ramp greater than 30° C./s so as to detach the self-supporting layer of silicon.
Inventors:
Carol braille
Frederik Magen
Frederik Magen
Application Number:
JP2015519305A
Publication Date:
December 13, 2017
Filing Date:
July 01, 2013
Export Citation:
Assignee:
INSERM(INSTITUT NATIONAL DE LA SANTE ET DE LA RECHERCHE MEDICALE)
International Classes:
C30B29/06; C30B33/00; H01L31/18
Domestic Patent References:
| JP2003347176A | ||||
| JP2008244435A | ||||
| JP2008285397A | ||||
| JP9181011A | ||||
| JP2007525018A | ||||
| JP2004235274A | ||||
| JP2010109356A | ||||
| JP2002502122A | ||||
| JP11004008A | ||||
| JP2009260310A |
Foreign References:
| US7811901 | ||||
| US20090242010 |
Attorney, Agent or Firm:
Maeda patent office