To provide a shape predicting technique of a semiconductor device wherein the simulation of its laminated films can be performed quickly and highly accurately, and its manufacturing faultiness can be prevented previously by controlling accurately the polishing time and polishing quantity of its laminated films.
In the shape predicting method of a semiconductor device, the altitude of the surface of the device is predicted after the CMP process of its films formed by laminating a plurality of different materials (for example, an oxide film 52 and a nitride film 53). In this case, the surface of the device is divided into regions in the direction of its CMP plane. The corresponding altitude of each divided region to its polishing time is predicted based on one or more calculating formulas. In the case of the material of an underlaying layer being exposed to the external in response to the progress of polishing in either one of the respective regions, when calculating the altitude of the exposed region, the parameters included in the altitude calculating formulas are so altered as to be limited to the ones of the exposed region and as to perform thereby the altitude calculation. Consequently, the increase of calculating speed and the increase of the accuracy of calculated result can be realized with respect to the simulation of the CMP of laminated films.
COPYRIGHT: (C)2007,JPO&INPIT
ARAI TOSHIYUKI
KAWASAKI TAKAHIKO
| JP2003324089A | 2003-11-14 | |||
| JP2003324089A | 2003-11-14 |
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