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Title:
SHIELDED MAGNETIC TUNNEL JUNCTION MAGNETO-RESISTIVE READ HEAD AND ASSEMBLY
Document Type and Number:
Japanese Patent JP2002304711
Kind Code:
A
Abstract:

To provide an MR read head having an MTJ device formed to be sufficiently thin for attaining the high surface density by reducing the space between magnetic shields.

As to the magnetic tunnel junction MTJ device 100, the magneto-resistive(MR) read head has the MTJ device 100 located between two spaced-apart magnetic shields S1, S2. The magnetic shields function also as electrical leads for connecting the head to a detection circuit. Conductive spacer layers 102, 104 are located at the top and bottom of the MTJ device 100 to connect the MTJ device 100 to the shields. The thickness of the spacer layer is selected to optimize the spacing between the shields. Each of the shields has the pedestal region for reducing the electric short-circuit between the shields in the case the space between the shields is too small, and the MTJ device 100 is located between these two pedestals.


Inventors:
DILL FREDERICK HAYES
FONTANA JR ROBERT EDWARD
PARKIN STUART STEPHEN PAPWORTH
TSANG CHING HWA
Application Number:
JP2001389357A
Publication Date:
October 18, 2002
Filing Date:
October 12, 1998
Export Citation:
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Assignee:
IBM
International Classes:
G11B5/39; G11B5/33; H01F10/16; H01F10/32; H01L43/08; (IPC1-7): G11B5/39; H01F10/16; H01F10/32; H01L43/08
Attorney, Agent or Firm:
Hiroshi Sakaguchi (1 person outside)