SHOTTKY BARRIER DIODE AND ITS USE - CENTRAL RES INST ELECT

Title:

SHOTTKY BARRIER DIODE AND ITS USE

Document Type and Number:

Japanese Patent JP2007149839

Kind Code:

A

Abstract:

To surely prevent increase of excessive currents at forward current flow and reverse currents which is caused by a pin hole formed on a Shottky electrode, relating to a Shottky barrier diode in which the Shottky electrode is provided on the surface of a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate, on which a pad electrode is provided.

Between the Shottky electrode and the pad electrode, an intermediate metal film is provided in which the height of the Shottky barrier with the silicon carbide epitaxial film is equal to or higher than that of the shottky barrier with the Shottky electrode and the silicon carbide epitaxial film. So, the current through a pin hole is suppressed, even if the height of the Shottky barrier with the pad electrode and the silicon carbide epitaxial film is lower than that of the Shottky barrier with the Shottky electrode and the silicon carbide epitaxial film.

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Inventors:

NAKAMURA TOMONOBU
TSUCHIDA SHUICHI
MITSUYANAGI TOSHIYUKI

Application Number:

JP2005340299A

Publication Date:

June 14, 2007

Filing Date:

November 25, 2005

Export Citation:

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Assignee:

CENTRAL RES INST ELECT

International Classes:

H01L29/872; H01L29/47

Domestic Patent References:

JPH11233796A	1999-08-27
JP2001053293A	2001-02-23
JP2001015771A	2001-01-19

Attorney, Agent or Firm:

Shunichiro Suzuki
Koji Makimura
Toru Suzuki
Yoshiko Yamoto

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