Title:
SHOTTKY BARRIER DIODE
Document Type and Number:
Japanese Patent JPH01143259
Kind Code:
A
Abstract:
PURPOSE:To prevent a metal layer for barrier formation from peeling by providing a polycrystalline silicon layer between the metal layer and an insulating film provided on a silicon substrate, and providing a silicide layer between the silicon layer and the metal layer. CONSTITUTION:A silicon substrate 22 includes on one principal surface with a silicon epitaxial layer 3, an insulating film 5, and a polycrystalline silicon layer 14 all superimposed in this order. It further includes a silicide layer 15 between the polycrystalline silicon layer 14 and a metal layer 6 for formation of a barrier, and a silicide layer 9 between the layers 3 and 6. The layers 5, 6 are formed when a semiconductor pellet 1 placed in a glass tube 12 and held by electrodes 10, 11 is heated at about 700 deg.C and sealed. Hereby, the adhesion between the metal layer 6 and the insulating film 5 is greatly increased to prevent the metal layer 6 from peeling owing to a heat treatment upon sealing of the semiconductor pellet 1.
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Inventors:
MAKI SEIICHIRO
Application Number:
JP30083287A
Publication Date:
June 05, 1989
Filing Date:
November 27, 1987
Export Citation:
Assignee:
MATSUSHITA ELECTRONICS CORP
International Classes:
H01L21/60; H01L29/41; H01L29/47; H01L29/872; (IPC1-7): H01L21/92; H01L29/44; H01L29/48
Attorney, Agent or Firm:
Toshio Nakao (1 outside)