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Title:
SHOWER HEAD OF WAFER PROCESSING APPARATUS
Document Type and Number:
Japanese Patent JP2003051489
Kind Code:
A
Abstract:

To provide a shower head of a wafer processing apparatus which can adjust the distribution amount of reaction gas, in a process region in a reaction chamber.

An upper plate 10 has a gas intake 12 for making the reaction gas flow in the reaction chamber. A face plate 20 faces the process region. A 1st baffle plate 30 is provided in a freely elevated state between the upper plate 10 and face plate 20 and has a top surface limiting a 1st gap 70, forming a 1st lateral flow passage for the reaction gas and also has a plurality of through-holes formed. A 2nd baffle plate 40 is provided in a free elevation state, between the 1st baffle plate 30 and face plate 20 and has a top surface limiting a 2nd gap 80, forming a 2nd lateral flow passage for the reaction gas and also has a plurality of through-holes formed. A gas adjusting device is used to determine the widths of the 1st gap 70 and the 2nd gap 80.


Inventors:
PARK JONG-CHUL
KIN TOUKEN
KEN GOEKI
JO HYE-JIN
Application Number:
JP2002000206765
Publication Date:
February 21, 2003
Filing Date:
July 16, 2002
Export Citation:
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Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
H01L21/3065; C23C16/455; H01L21/00; C23C16/44; (IPC1-7): H01L21/3065
Attorney, Agent or Firm:
服部 雅紀