Title:
SiC MONITOR WAFER MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP3881562
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain SiC monitor wafer for flattening the surface to such an extent that a particle can be detected.
SOLUTION: Crystal system 3C SiC is deposited in a CVD (Chemical Vapor Deposition) method on a substrate, and the SiC is removed from the substrate. By using mechanical polishing or in combination with CMP (Chemo Mechanical Polishing), the surface of the SiC is flattened. Then, the surface is irradiated with GCIB (Gas Cluster Ion Beam) to such an extent that the surface roughness becomes Ra=0.5 nm or smaller, and the impurity density of wafer surface becomes 1×1011 atoms/cm2 or smaller.
Inventors:
Ko Yamada
Jiro Matsuo
Kisho Toyoda
Murata Kazutoshi
Naomasa Miyatake
Jiro Matsuo
Kisho Toyoda
Murata Kazutoshi
Naomasa Miyatake
Application Number:
JP2002045725A
Publication Date:
February 14, 2007
Filing Date:
February 22, 2002
Export Citation:
Assignee:
Mitsui Shipbuilding Co., Ltd.
International Classes:
H01L21/02; C23C16/01; C23C16/32; C30B25/02; C30B29/36; C30B33/00; C30B33/12; H01L21/205; (IPC1-7): H01L21/02; C30B29/36; C30B33/12; H01L21/205
Domestic Patent References:
| JP10116757A | ||||
| JP11092295A | ||||
| JP11087202A | ||||
| JP10199848A | ||||
| JP10012692A |
Foreign References:
| WO2001006538A1 |
Attorney, Agent or Firm:
Yuichi Murakami
Okubo Misao
Okubo Misao