Title:
SiC WAFER MANUFACTURING METHOD, SiC SEMICONDUCTOR MANUFACTURING METHOD AND GRAPHITE SILICON CARBIDE COMPOSITE SUBSTRATE
Document Type and Number:
Japanese Patent JP2016018891
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing method which is unlikely to be damaged by handling and which can easily obtain a thinner SiC wafer in a manufacturing process of bonding and then separating a single crystalline SiC substrate and a polycrystalline SiC substrate to obtain an SiC wafer.SOLUTION: An SiC wafer manufacturing method comprises: a process of preparing a graphite silicon carbide composite substrate which has a glassy carbon layer on a surface of a graphite base material, and a CVD-SiC layer on the glassy carbon layer, and a single crystalline SiC substrate having an ion injected layer where a hydrogen ion is injected into a surface; a bonding process of bonding the CVD-SiC layer of the graphite silicon carbide composite substrate and the ion injected layer of the single crystalline SiC substrate to obtain a bonded body; a first separation process of heating the bonded body to separate the ion injected layer from the single crystalline SiC substrate to obtain a single crystalline deposited substrate; and a second separation process of separating the glassy carbon layer and the CVD-SiC layer of the single crystalline deposited substrate to obtain an SiC wafer.SELECTED DRAWING: Figure 1
Inventors:
FURUICHI WATARU
NAGATA ATSUHITO
MIMUKAI YUKI
NAGATA ATSUHITO
MIMUKAI YUKI
Application Number:
JP2014140565A
Publication Date:
February 01, 2016
Filing Date:
July 08, 2014
Export Citation:
Assignee:
IBIDEN CO LTD
International Classes:
H01L21/02; H01L21/265
Domestic Patent References:
| JP2009117533A | 2009-05-28 | |||
| JP2005005708A | 2005-01-06 | |||
| JPH10167830A | 1998-06-23 | |||
| JPH10287495A | 1998-10-27 |
Attorney, Agent or Firm:
Patent business corporation glory patent office
Yuriko Hamada
Kenji Kitajima
Hironori Honda
Yuriko Hamada
Kenji Kitajima
Hironori Honda