Title:
ＳｉＣ化学気相成長装置及びＳｉＣエピタキシャルウェハの製造方法
Document Type and Number:
Japanese Patent JP7242990
Kind Code:
B2
Abstract:
A SiC chemical vapor deposition apparatus is provided, including: a furnace body inside of which a growth space is formed; and a mounting table which is positioned on a lower portion of the growth space and has a mounting surface on which a SiC wafer is mounted, in which the furnace body is separated into a plurality of members in a vertical direction substantially orthogonal to the mounting table, the plurality of members includes a first portion and a second portion, the first portion includes a protruding part that protrudes in an outer peripheral direction, the second portion includes a hook part on which the protruding part is hung, and the first portion and the second portion are connected to each other by hanging the hook part on the protruding part.
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Inventors:
Kiichi Umeda
Atsumi Extensive
Atsumi Extensive
Application Number:
JP2018226466A
Publication Date:
March 22, 2023
Filing Date:
December 03, 2018
Export Citation:
Assignee:
Resonac Co., Ltd.
International Classes:
H01L21/205; C23C16/42; C23C16/44; C30B25/20; C30B29/36
Domestic Patent References:
| JP2002001100A | ||||
| JP3016121A | ||||
| JP2013074213A | ||||
| JP4269822A | ||||
| JP2008147420A | ||||
| JP2011168431A | ||||
| JP2017157678A |
Foreign References:
| WO2017188381A1 |
Attorney, Agent or Firm:
Shu Oikawa
Norihiko Ara
Tomomasa Katsumata
Ryuichiro Majima
Norihiko Ara
Tomomasa Katsumata
Ryuichiro Majima
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