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Title:
SiC EPITAXIAL WAFER
Document Type and Number:
Japanese Patent JP2022077723
Kind Code:
A
Abstract:
To provide a SiC epitaxial wafer with high in-plane uniformity of a concentration of a doping material in a high concentration layer.SOLUTION: A SiC epitaxial wafer 100 of the present invention, comprises: a SiC single crystal substrate; and a high concentration layer 21(20) of which a mean value of an n-type doping concentration is 1×1018/cm3 or larger and 1×1019/cm3 or less, and an in-plane uniformity of a doping concentration is 30% or less on the SiC single crystal substrate.SELECTED DRAWING: Figure 1

Inventors:
ISHIBASHI NAOTO
FUKADA KEISUKE
Application Number:
JP2020188693A
Publication Date:
May 24, 2022
Filing Date:
November 12, 2020
Export Citation:
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Assignee:
SHOWA DENKO KK
International Classes:
H01L21/205; C23C16/32; C30B25/20; C30B29/36; H01L21/20
Domestic Patent References:
JPH08139048A1996-05-31
JP2015051895A2015-03-19
JP2006237319A2006-09-07
Foreign References:
WO2018211737A12018-11-22
Attorney, Agent or Firm:
Shu Oikawa
Norihiko Ara
Tomomasa Katsumata



 
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