Title:
SiC単結晶およびその成長方法
Document Type and Number:
Japanese Patent JP4304783
Kind Code:
B2
Inventors:
Hiroshi Shiomi
Tsunenobu Kimoto
Hiroyuki Matsunami
Tsunenobu Kimoto
Hiroyuki Matsunami
Application Number:
JP25157599A
Publication Date:
July 29, 2009
Filing Date:
September 06, 1999
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
C30B29/36; C30B23/00; C30B23/02
Domestic Patent References:
| JP4016597A | ||||
| JP2804860B2 |
Other References:
Jinwei YANG et al.,Sublimation growth of 6H-SiC crystals on different faces of a 6H-SiC seed,Inst. Phys. Conf. Ser.,1994, No.137,pp.17-20
Attorney, Agent or Firm:
Yoshiki Hasegawa