Title:
ＳｉＣ単結晶及びその製造方法
Document Type and Number:
Japanese Patent JP6512168
Kind Code:
B2
Abstract:
A low-resistance p-type SiC single crystal containing no inclusions is provided. A method for producing a SiC single crystal in which a SiC seed crystal substrate is contacted with a Si-C solution having a temperature gradient such that a temperature of the Si-C solution decreases from an interior of the Si-C solution toward a surface of the Si-C solution, to grow the SiC single crystal, wherein the Si-C solution comprises Si, Cr, A1 and B, and wherein the A1 is comprised in the Si-C solution in an amount of 10 at% or greater, based on the total of the Si, Cr, A1 and B, and the B is comprised in the Si-C solution in an amount of greater than 0.00 at% and no greater than 1.00 at%, based on the total of the Si, Cr, A1 and B.
Inventors:
Shirai Takeyuki
Application Number:
JP2016096098A
Publication Date:
May 15, 2019
Filing Date:
May 12, 2016
Export Citation:
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA
International Classes:
C30B29/36; C30B19/04
Domestic Patent References:
| JP2016056079A | ||||
| JP2005314217A | ||||
| JP2017065955A | ||||
| JP2017065986A | ||||
| JP2016052961A | ||||
| JP2009184879A |
Attorney, Agent or Firm:
Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Nobuo Sekine
Masaharu Konoue
Takashi Ishida
Tetsuji Koga
Nobuo Sekine
Masaharu Konoue