Title:
ＳｉＣのスライス方法
Document Type and Number:
Japanese Patent JP6506520
Kind Code:
B2
Abstract:
Disclosed herein is an SiC ingot slicing method including: an initial separation layer formation step for scanning a focal point of a laser beam parallel to an end face of the SiC ingot along a scheduled separation plane, and forming a separation layer at a position at a distance from the end face; a repetition step for sequentially moving, after the initial separation layer formation step, the focal point by the distance equal to the thickness of an SiC plate from the separation layer toward the end face, scanning the focal point parallel to the end face, repeating the formation of the separation layer, and forming the plurality of separation layers; and a separation step for applying an external force to the plurality of separation layers formed by the repetition step, peeling off the SiC plates starting from the separation layers, and acquiring the plurality of SiC plates.
More Like This:
Inventors:
Kazuya Hirata
Yoko Nishino
Yoko Nishino
Application Number:
JP2014187496A
Publication Date:
April 24, 2019
Filing Date:
September 16, 2014
Export Citation:
Assignee:
Disco Co., Ltd.
International Classes:
H01L21/304; B23K26/53; B28D5/00
Domestic Patent References:
| JP2013049161A | ||||
| JP2013161820A | ||||
| JP2011224658A | ||||
| JP2012109341A |
Attorney, Agent or Firm:
Patent Business Corporation Tokyo Alpa Patent Office
Kyoko Kawamura
Isao Sasaki
Ken Kubo
Kyoko Kawamura
Isao Sasaki
Ken Kubo