Title:
ＳｉＣ基板
Document Type and Number:
Japanese Patent JP7396442
Kind Code:
B2
Abstract:
To provide a SiC epitaxial wafer having less amount of bandlike stacking faults.SOLUTION: A SiC epitaxial wafer according to this embodiment includes a SiC substrate, an epitaxial layer laminated on a first surface of the SiC substrate, one-fourth of an area of the epitaxial layer being occupied by a bandlike stacking fault in the epitaxial layer.SELECTED DRAWING: Figure 4
Inventors:
Yoshitaka Nishihara
Koji Kamei
Koji Kamei
Application Number:
JP2022186625A
Publication Date:
December 12, 2023
Filing Date:
November 22, 2022
Export Citation:
Assignee:
Resonac Co., Ltd.
International Classes:
C30B29/36; H01L21/20
Domestic Patent References:
| JP2015129087A |
Foreign References:
| WO2016121628A1 | ||||
| WO2012144614A1 |
Attorney, Agent or Firm:
Shu Oikawa
Norihiko Ara
Tomoo Katsumata
Ryuichiro Majima
Norihiko Ara
Tomoo Katsumata
Ryuichiro Majima
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