SIC-COATED C/C COMPOSITE MATERIAL

Japanese Patent JP3120884

B2

PURPOSE: To improve the thermal shock resistance, mechanical strength, high quality and useful life by forming a specific layer between a C/C composite substrate containing C fiber and an SiC layer.
CONSTITUTION: A C/C composite substrate 5 containing carbon fiber is subjected to vapor growth vacuum depositing reaction in the presence of SiCl4, etc., in a furnace to form a porous SiC film 3. The surface layer part of the C/C composite material 1 is then subjected to partial silicifying treatment in the presence of SiO glass, etc., at about 1500°C to form a reinforced layer 4, composed of C fiber 8 having only the silicified surface layer part and a silicified part 9 and having the thickness of (7/10) to (10/7) that of the SiC layer 2 and the diameter of 10 to 30 times that of the C fiber 10. The total cross-sectional area of the silicified part 9 is (1/9) to 1 that of the C fiber 8. The silicified material is then subjected to vacuum depositing reaction in the presence of a desired reactional gas to form an SiC film 2 composed of an SiC columnar crystal. The silicified layer in the surface layer part is integrated with a porous SiC film 3. Thereby, the objective SiC-coated C/C composite material is produced.

WO/2012/131321	LITHIUM ION BATTERIES AND ELECTRODES THEREFOR
WO/2020/261971	CARBONACEOUS COMPOSITE MATERIAL
WO/2009/035328	LITHOGRAPHIC APPARATUS WITH ROTATION FILTER DEVICE

Taku Yamazaki
Haruo Tazoe
Shigeo Kato
Teruo Sugai
Hiroaki Koike
Shiro Hotate

JP35127291A

December 25, 2000

December 13, 1991

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Toshiba Ceramics Co., Ltd.

C04B35/83; C04B35/52; C04B35/565; C04B35/573; C04B35/80; C04B41/52; C04B41/87; (IPC1-7): C04B41/87; C04B35/52; C04B35/565; C04B35/573; C04B35/80; C04B35/83

Toru Tanabe

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