Title:
SIC WAFER PROCESSING METHOD
Document Type and Number:
Japanese Patent JP2022083672
Kind Code:
A
Abstract:
To provide a SiC wafer processing method that can avoid the risk of damage or breakage to a SiC wafer.SOLUTION: A method includes a step of arranging a protective member T1 on the surface of an SiC wafer 10, a step of holding the protective member side of the SiC wafer on a first chuck table 22, leaving a region corresponding to the outer peripheral surplus region of the SiC wafer to position and grind a grinding wheel 26 in a region corresponding to a device region, and leaving a ring-shaped reinforcing portion 16 in the outer peripheral surplus region to thin the SiC wafer, a step of coating the back surface 10b of the SiC wafer with a metal film, a step of removing the ring-shaped reinforcing portion with a cutting blade or a laser, and a division step of breaking a planned division line of the SiC wafer from the back surface of the SiC wafer with the cutting blade or laser to divide the device region into individual device chips.SELECTED DRAWING: Figure 2
Inventors:
HAIMOTO TAKASHI
Application Number:
JP2020195131A
Publication Date:
June 06, 2022
Filing Date:
November 25, 2020
Export Citation:
Assignee:
DISCO ABRASIVE SYSTEMS LTD
International Classes:
H01L21/301; B23K26/38; B24B7/04; B24B27/06; B24B41/06; B24B49/12; H01L21/304
Attorney, Agent or Firm:
Naozumi Ono
Okunuki Sachiko
Tsuyoshi Tsukano
Yoshifumi Kaneko
Okunuki Sachiko
Tsuyoshi Tsukano
Yoshifumi Kaneko
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