PURPOSE: To prevent the electrostatic charge sound by ozone generation and contact AC electrostatic charge and the deterioration of the surface of a photosensitive drum by an electric discharge by providing a charge implantation layer on a photosensitive body, bringing a contact electrostatic change member impressed with a voltage into contact therewith, directly implanting the charges, thereby electrostatically charging the charge generation layer and lowering the voltage.
CONSTITUTION: A conductive layer 12 is formed as an under coating layer on an aluminum cylinder 11 as a grounded conductive base body and an implantation preventive layer 13 for preventing dark attenuation by the implantation of the holes from an aluminum substrate is provided. Further, a charge generation layer 14 and a charge transfer layer 15 for a P type semiconductor are provided. The charge implantation layer 16 is provided therein to enable the direction implantation and electrostatic charge from the contact electrostatic charge member. The implantation layer 16 is formed by dispersing a prescribed amt. of SnO2 as electrostatic charge fillers 17 into a phosphazene resin. As a result, the electrostatic charge which does not accompany the electric discharge is executed with a low DC voltage and the ozone generation and the AC electrostatic charge sound are eliminated.
ARAYA JUNJI (JP)
KUGO HARUMI (JP)
