SILICA SOL MODIFIED ORGANOPHOSPHOSILICONE RESIN AND SEMICONDUCTOR DEVICE CONTAINING THE SAME RESIN AS INTERLAMINAR INSULATION FILM

Title:

SILICA SOL MODIFIED ORGANOPHOSPHOSILICONE RESIN AND SEMICONDUCTOR DEVICE CONTAINING THE SAME RESIN AS INTERLAMINAR INSULATION FILM

Document Type and Number:

Japanese Patent JPH0551457

Kind Code:

A

Abstract:

PURPOSE:To obtain the title resin useful as an interlaminar isolating film for multilayered semiconductor device, reduced in shrinkage by heat curing and hardly producing strain of a membrane by heat oxidation by hydrolyzing a specific organophosphosilicone resin and then polycondensing the hydrolyzate with a silica sol. CONSTITUTION:The objective resin obtained by hydrolyzing an organophosphosilicone resin expressed by the formula [R<1> is methyl or P(O) (OR<2>)2; R<2> is methyl or Si(OR<1>) 3] and having 3000-10000 molecular weight and then polycondensing the hydrolyzate with a silica sol. The resin is obtained by e.g. reacting tetraacetoxysilane with trimethyl phosphate in THF under nitrogen stream while heating under reflux, then adding methanol to the resultant oligomer and stirring these components and adding the mixture into a silica gel uniformly dispersed in methanol, further adding an ion exchange water thereto and carrying out hydrolysis and polycondensation under heating.

Inventors:

KOBAYASHI TOMOKO
FUKUYAMA SHUNICHI

Application Number:

JP21207191A

Publication Date:

March 02, 1993

Filing Date:

August 23, 1991

Export Citation:

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Assignee:

FUJITSU LTD

International Classes:

C08G77/00; C08G77/02; C08G79/02; C08L83/00; C08L83/02; H01L21/312; H01L21/768; H01L23/522; (IPC1-7): C08G77/00; C08G79/02; C08L83/00; H01L21/312; H01L21/90

Attorney, Agent or Firm:

Aoki Akira (3 outside)

Next Patent: JPS551458