Title:
SILICIDE FILM FORMING METHOD
Document Type and Number:
Japanese Patent JP2023088518
Kind Code:
A
Abstract:
To provide a silicide film forming method capable of forming a uniform metal silicide film on a semiconductor wafer.SOLUTION: A semiconductor wafer containing silicon as a constituent element is placed in a sputtering chamber. After that, the inside of the sputtering chamber is evacuated until the pressure becomes 9×10-5 Pa or less. Thereafter, a metal film is deposited on the semiconductor wafer by introducing sputtering gas into the sputtering chamber and sputtering the target. A laser beam is made incident on a metal film deposited on a semiconductor wafer to cause silicide reaction to form a metal silicide film.SELECTED DRAWING: Figure 1
Inventors:
OBA TAKU
Application Number:
JP2021203302A
Publication Date:
June 27, 2023
Filing Date:
December 15, 2021
Export Citation:
Assignee:
SUMITOMO HEAVY INDUSTRIES
International Classes:
H01L21/28; C23C14/06; C23C14/58; H01L21/285
Attorney, Agent or Firm:
Mikio Kuruyama
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