Title:
炭化珪素質セラミックス及びハニカム構造体
Document Type and Number:
Japanese Patent JP5883795
Kind Code:
B2
Abstract:
Provided is a silicon carbide ceramic having a small amount of resistivity change due to temperature change and being capable of generating heat by current application; and containing silicon carbide crystals having 0.1 to 25 mass% of 4H-SiC silicon carbide crystals and 50 to 99.9 mass% of 6H-SiC silicon carbide crystals, preferably having a nitrogen content of 0.01 mass% or less, more preferably containing two or more kinds of silicon carbide particles containing silicon carbide crystals and silicon for binding these silicon carbide particles to each other and having a silicon content of from 10 to 40 mass%.
Inventors:
Atsushi Kaneda
Takayuki Inoue
Watanabe Tsuyoshi
Takayuki Inoue
Watanabe Tsuyoshi
Application Number:
JP2012536563A
Publication Date:
March 15, 2016
Filing Date:
September 29, 2011
Export Citation:
Assignee:
Nippon Insulator Co., Ltd.
International Classes:
C04B35/565; B01D53/86; B01J32/00; B01J35/04; C04B38/00
Domestic Patent References:
| JPH1052618A | 1998-02-24 | |||
| JPH0971466A | 1997-03-18 | |||
| JPH1052618A | 1998-02-24 | |||
| JPH0971466A | 1997-03-18 |
Foreign References:
| WO2006112052A1 | 2006-10-26 |
Attorney, Agent or Firm:
Ippei Watanabe
Shigeru Koike
Shigeru Koike