炭化珪素エピタキシャル成長装置、炭化珪素エピタキシャルウエハの製造方法及び炭化珪素半導体装置の製造方法

Title:

炭化珪素エピタキシャル成長装置、炭化珪素エピタキシャルウエハの製造方法及び炭化珪素半導体装置の製造方法

Document Type and Number:

Japanese Patent JP6477419

Kind Code:

B2

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Inventors:

Sakai
Yoichiro Mitani
Akihito Ohno
Mizobe Takuma

Application Number:

JP2015212620A

Publication Date:

March 06, 2019

Filing Date:

October 29, 2015

Export Citation:

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Assignee:

Mitsubishi Electric Corporation

International Classes:

H01L21/205; C23C16/42; C23C16/46; C30B25/12; C30B29/36; H01L21/329; H01L21/336; H01L29/12; H01L29/78; H01L29/872

Domestic Patent References:

JP2015032630A
JP62042416A
JP2015146416A

Foreign References:

US6001183

Attorney, Agent or Firm:

Tadahiko Inaba
Kanako Murakami
Shigeaki Matsui
Kuratani Yasutaka

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