Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
Document Type and Number:
Japanese Patent JP2022041272
Kind Code:
A
Abstract:
To provide a silicon carbide semiconductor device that achieves high channel mobility and high stability of threshold voltage and a manufacturing method for the same.SOLUTION: A silicon carbide semiconductor device includes a first semiconductor region 3 of a second conductivity type and a second semiconductor region 2 of a second conductivity type provided on the front surface of a first conductivity type silicon carbide semiconductor substrate 1, an interface layer 4 in contact with the silicon carbide semiconductor substrate 1, the first semiconductor region 3 and the second semiconductor region 2, a gate insulating film 5 provided on the interface layer 4, and a gate electrode 6 provided on the gate insulating film 5. The interface layer 4 contains nitrogen and has a barium concentration of 1×1018/cm3 or less. The gate insulating film 5 contains nitrogen and has a barium concentration greater than 1×1018/cm3.SELECTED DRAWING: Figure 1
Inventors:
OKAMOTO MITSUHISA
OKADA MASAKAZU
HASUNUMA TAKASHI
FUJIKAKE SHINJI
OKADA MASAKAZU
HASUNUMA TAKASHI
FUJIKAKE SHINJI
Application Number:
JP2020146374A
Publication Date:
March 11, 2022
Filing Date:
August 31, 2020
Export Citation:
Assignee:
AIST
UNIV TSUKUBA
FUJI ELECTRIC CO LTD
UNIV TSUKUBA
FUJI ELECTRIC CO LTD
International Classes:
H01L21/336; H01L21/316; H01L29/12; H01L29/78
Attorney, Agent or Firm:
Akinori Sakai
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