Title:
SILICON ANISOTROPICALLY ETCHING METHOD AND APPARATUS THEREOF
Document Type and Number:
Japanese Patent JP3774115
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a silicon anisotropically etching method and an apparatus thereof which makes a high-anisotropy and a good etched shape compatible with a high etching rate and high selectivity.
SOLUTION: In etching a silicon film on an insulation film in a plurality of patterns different in size, the film is etched in an initial stage using a plasma pulled in by applying an ac power of a high frequency (13.56 MHz), and then etched using a plasma pulled in by intermittently applying an ac power of a low frequency (380 KHz). The former etching is switched to the latter etching at a timing when the etching in the highest etching rate pattern (the largest size pattern) proceeds to an interface with a lower insulation film. This timing is detected by an end point detector 10.
Inventors:
Toshihiko Ochi
Hiroaki Kono
Kasai Kazuo
Hiroaki Kono
Kasai Kazuo
Application Number:
JP2000354991A
Publication Date:
May 10, 2006
Filing Date:
November 21, 2000
Export Citation:
Assignee:
Sumitomo Precision Products Co., Ltd.
International Classes:
H01L21/302; H01L21/3065; (IPC1-7): H01L21/3065
Domestic Patent References:
| JP4148534A | ||||
| JP11297679A | ||||
| JP4105318A | ||||
| JP992645A |
Attorney, Agent or Firm:
Nobuo Kono