Title:
SILICON BASE SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPS58143589
Kind Code:
A
Abstract:
PURPOSE:To control the contents of hydrogen or fluorine in semiconductor adjusting the energy gap of semiconductor to specified values by a method wherein silicon compound is decomposed by glow discharge being supported on organic supporter in plasma. CONSTITUTION:The porous palycrystaline silicon particles with mean diameter of around 2mm. phi are decomposed by glow discharge at the substrate temperature of 250 deg.C being supported on a quartz made supporter 2 while amorphous silicon is grown on SnO2 surface of glass substrate in order of P, I, N type layers and finally aluminum electrode is evaporated. Through these procedures such as supporting silicon particles in plasma to decompose them by glow discharge, the hydrogen content in the film is reduced without deteriorating the film quality resultantly decreasing the energy gap of intrimsic amorphous silicon layer as an active layer enabling to produce solar cell effectively utilizing the light on the long wave length side.
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Inventors:
TSUSHIMO KAZUNAGA
OOWADA YOSHIHISA
OOWADA YOSHIHISA
Application Number:
JP2655982A
Publication Date:
August 26, 1983
Filing Date:
February 19, 1982
Export Citation:
Assignee:
KANEGAFUCHI CHEMICAL IND
International Classes:
H01L31/04; H01L21/205; H01L31/20; (IPC1-7): H01L21/205; H01L31/04
Domestic Patent References:
| JPS5671927A | 1981-06-15 |
Attorney, Agent or Firm:
Toshihiko Uchida